<^,mi-(2onaua.toi lpioaucti, qnc. high power silicon controlled rectifier 1300 volts 110 arms C150,2 amplifying gate C150 and c152 silicon controlled rectifiers are de- signed for pnase control applications. these are all-diffused, pic-pac devices employing the field-proven amplifying gate. features: ? high di/dt rating ? high dv/dt capability with selections available ? excellent surge and i2t ratings providing easy fusing ? rugged hermetic package with long creepage path maximum allowable ratings . c152 type C150, c152e C150, c152m C150, c152s C150, c152n C150, c152t C150, c152p c1so, c152pa C150, c152pb C150, c152pc repetitive peak off-state voltage, vobm1 tj = -40c to +125c 500 volts 600 700 800 900 1000 1100 1200 1300 repetitive peak reverse voltage, vrrm1 tj - -40c to +125c 500 volts 600 700 800 900 1000 1100 1200 1300 non-repetitive peak reverse voltage, vrsm 1 tj = +125c 600 volts 720 850 950 1075 1200 1325 1450 1550 1 half sinewave waveform, 10 msec. max. pulse width. rms on-state current, it(rms) ' ? ' 10 amperes (all conduction angles) average on-state current, it(av) depes on conduction angle (see charts 1 and 4) peak one-cycle surge (non-repetitive) on-state current, itsm (60 hz) . 1500 amperes peak one-cycle surge (non-repetitive) on-state current, itsm (50 hz) . 1400 amperes critical rate-of-rise of on-state current (non-repetitive)* 800 a/jus critical rate-of-rise of on-state current (repetitive)* 500 a/ps i2t (for fusing), for times > 1.5 milliseconds 7000 (rms ampere)-4 seconds peak gate power dissipation, pgm 10 watts average gate power dissipation, pg(av) 2 watts storage temperature, tstg -40c to +150c operating temperature, tj -40c to +125c stud torque 125 lbs.-in. (min.) - 150 lbs.-in. (max.) 14 n-m (min.) - 17 n-m (max.) *di/dt ratings established in accordance with eia-nema standard rs-397, jon 5-2-2-6 for conditions of vdrm stated above; 20 volts, 20 ohms gate trigger source with 0.5 jusec short circuit trigger current rise ?
characteristics C150,c152 test repetitive peak reverse and off-state current C150, c152e C150, c152m C150, c152s c1so, c152n C150, c152t C150, c152p C150, c152pa C150, c152pb C150, c152pc repetitive peak reverse and off-state current C150, c152e C150, c152m C150, c152s C150, c152n C150, c152t C150, c152p C150, c152pa C150, c152pb C150, c152pc thermal resistance critical rate-of-rise of off-state voltage (higher values may cause device switching) symbol jdrm and !rrm !drm and !rrm r0jc dv/dt min. - - - - - - - - - - - - - - - - - - _ 200 typ. 3 3 3 3 3 3 3 3 3 15 15 15 15 15 15 15 10 8 .2 500 max. 10 10 10 10 10 10 10 6 5 20 20 20 20 20 20 20 13 11 .3 units ma ma c/watt v/ysec test conditions tj = +25c vdrm = vrrm = 500 volts peak 600 700 800 900 1000 1100 1200 1300 tj = +125c vdrm = vrrm 500 volts peak 600 700 800 900 1000 1100 1200 1300 junction-to-case tj = +125c, rated vdrm, using linear exponential rising waveform. gate open circuited. vdrm higher minimum dv/dt selections available - consult factory. holding current turn-on delay time v gate pulse width necessary to trigger dc gate trigger current dc gate trigger voltage peak on-state voltage circuit , commutated turn-off time** !h. td jgt vgt vtm tq - ? - - - - 0.15 ? 20 1 8 50 75 15 1.25 - 2.0 100 500 ? 10 150 200 125 3.0 - 2.6 t madc /^sec msec madc vdc volts jusec tc = +25c, anode supply = 24 vdc. initial forward current = 2 amps. tc = +25c, it = 50 adc, vdrm = rated. gate supply: 10 volt open circuit, 20 ohm, 0.1 jusec max. rise time tc = +25c. gate supply: 20 volt open circuit, 40 ohm, 0.5 /usec rise time. it = 1.0 amps, for high di/dt capability. see chart 9. tc = +25c, vd = 6 vdc, rl = 3 ohms tc = -40c, vd = 6 vdc, rl ~ 3 ohms tc = +125c, vd = 6 vdc, rl = 3 ohms tc = -40c to +120c, vd = 6 vdc, rl = 3 ohms tc =+125c, vd = rated, rl = 1000 ohms tc = +25c, itm = 500 amps. peak. duty cycle < 0.01% (1) tj =+125c (2) itm = 50 amps , (3) vr = 50 volts min. (4) vdrm (reapplied) = rated (5) rate-of-rise of reapplied off-state voltage = 20v//usec linear | consult factory if guaranteed turn-off time is required. **typical turn-off time increases 30%, if it.m is inaeased to 500 amps
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